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| 500V 58A 0.090 B2 APL502B2 APL502L LINEAR MOSFET T-MAXTM TO-264 Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). * Popular T-MAXTM or TO-264 Package * Higher Power Dissipation MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 L * Higher FBSOA D G S All Ratings: TC = 25C unless otherwise specified. APL502B2-L UNIT Volts Amps 500 58 232 30 40 730 5.84 -55 to 150 300 58 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 500 58 0.09 25 (VDS > ID(ON) x R DS(ON) Max, VGS = 12V) 2 Drain-Source On-State Resistance (VGS = 12V, 29A) Ohms A Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 250 100 2 4 nA 8-2003 050-5896 Rev D Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 15V VDD = 250V ID = 29A @ 25C RG = 0.6 MIN TYP APL502B2-L MAX UNIT 7485 1290 617 13 27 56 16 9000 1810 930 26 54 84 20 ns pF THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W .17 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.78mH, R = 25, Peak I = 58A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 0.18 0.16 ZJC, THERMAL IMPEDANCE (C/W) 0.9 0.14 0.12 0.10 0.5 0.08 0.06 0.04 0.02 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.3 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.7 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 RC MODEL Junction temp. ( "C) 0.0602 Power (Watts) 0.109 0.305F 0.0158F 8-2003 Case temperature 050-5896 Rev D FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL Typical Performance Curves 120 VGS=10V, 15 V ID, DRAIN CURRENT (AMPERES) APL502B2-L 120 VGS=10, 15V 100 8V 80 7.5 V 60 7V 40 20 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 100 8V 80 7.5 V 60 7V 40 6.5 V 6V 5.5 V 0 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS 80 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 6.5 V 6V 5.5 V 20 1.30 NORMALIZED TO = 10V @ 29A V GS ID, DRAIN CURRENT (AMPERES) (NORMALIZED) 1.20 VGS=10V 1.10 60 40 1.00 0.90 20 TJ = +125C TJ = -55C TJ = +25C 0.80 0.70 0 VGS=20V 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 60 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT ID, DRAIN CURRENT (AMPERES) 50 BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN 1.15 1.10 40 1.05 30 20 1.00 10 0 0.95 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 25 0.90 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 050-5896 Rev D 8-2003 APL502B2-L 2.5 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) I V D 1.2 = 29A VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) GS = 12V 2.0 1.1 1.0 0.9 1.5 1.0 0.8 0.7 0.6 -50 -25 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 232 100 OPERATION HERE LIMITED BY RDS (ON) 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 30,000 ID, DRAIN CURRENT (AMPERES) 100S C, CAPACITANCE (pF) 10,000 5,000 Ciss 10 5 1mS 10mS 100mS 1 TC =+25C TJ =+150C SINGLE PULSE .1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA Coss 1,000 500 Crss DC line 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 8-2003 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain Source 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) Gate Drain Source 050-5896 Rev D 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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